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R6076MNZ1C9

ROHM Semiconductor
RoHS
RoHS RoHS compliant
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CHANNEL 600V 76A TO247
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Buying Options
Total Price: USD $135.6
Unit Price: USD $135.6011
≥1 USD $135.6011
≥10 USD $131.081
≥100 USD $117.5207
Inventory: 904
Minimum: 1
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Technical Details

Compliance

RoHS Status ROHS3 Compliant

Technical

Avalanche Energy Rating (Eas) 68.7 mJ
DS Breakdown Voltage-Min 600V
Pulsed Drain Current-Max (IDM) 228A
Drain-source On Resistance-Max 0.055Ohm
Drain Current-Max (Abs) (ID) 76A
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 600V
Gate Charge (Qg) (Max) @ Vgs 115nC @ 10V
Current - Continuous Drain (Id) @ 25°C 76A Tc
Input Capacitance (Ciss) (Max) @ Vds 7000pF @ 25V
Vgs(th) (Max) @ Id 5V @ 1mA
Rds On (Max) @ Id, Vgs 55m Ω @ 38A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 740W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
JESD-30 Code R-PSFM-T3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Position SINGLE
Technology MOSFET (Metal Oxide)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Last Time Buy
Published 2017
Operating Temperature -55°C~150°C TJ

Physical

Transistor Element Material SILICON
Surface Mount NO
Package / Case TO-247-3
Mounting Type Through Hole

Supply Chain

Factory Lead Time 16 Weeks

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