NTD95N02R
RoHS
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Package TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 24V 12A DPAK
PDF
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Buying Options
Total Price: USD $10.05
Unit Price: USD $10.04815
≥1 USD $10.04815
≥10 USD $8.2441
≥100 USD $7.98665
≥500 USD $7.7292
≥1000 USD $7.47175
Inventory: 1085
Minimum: 1
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2006
JESD-609 Code e0
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Voltage - Rated DC 24V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 240
Reach Compliance Code not_compliant
Current Rating 95A
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 3
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 1.25W Ta 86W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 86W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2400pF @ 20V
Current - Continuous Drain (Id) @ 25°C 12A Ta 32A Tc
Gate Charge (Qg) (Max) @ Vgs 21nC @ 4.5V
Rise Time 82ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 70 ns
Turn-Off Delay Time 26 ns
Continuous Drain Current (ID) 32A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.005Ohm
Drain to Source Breakdown Voltage 24V
Avalanche Energy Rating (Eas) 84 mJ
Compliance
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
Alternative Model
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