DS Breakdown Voltage-Min 600V
Fault Protection Over Temperature, Reverse Current
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 46A
Turn-Off Delay Time 230 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 600V
Gate Charge (Qg) (Max) @ Vgs 150nC @ 10V
Current - Continuous Drain (Id) @ 25°C 46A Ta
Input Capacitance (Ciss) (Max) @ Vds 6000pF @ 25V
Vgs(th) (Max) @ Id 4.5V @ 1mA
Rds On (Max) @ Id, Vgs 81m Ω @ 23A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Output Configuration High Side
Power Dissipation-Max 120W Tc
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Last Time Buy
Operating Temperature 150°C TJ