STU13NM60N
RoHS 
RoHS compliant
RoHS compliantPackage TO-251-3 Short Leads, IPak, TO-251AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) IPAK Tube
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Buying Options
Total Price: USD $8.24
Unit Price: USD $8.240688
≥1 USD $8.240688
≥10 USD $7.774235
≥100 USD $7.334186
≥500 USD $6.919043
≥1000 USD $6.527399
Inventory: 8344
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 26 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Tube
Series MDmesh? II
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Base Part Number STU13N
Number of Elements 1
Power Dissipation-Max 90W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 90W
Case Connection DRAIN
Turn On Delay Time 3 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 360m Ω @ 5.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 790pF @ 50V
Current - Continuous Drain (Id) @ 25°C 11A Tc
Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V
Rise Time 8ns
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 30 ns
Continuous Drain Current (ID) 11A
Gate to Source Voltage (Vgs) 25V
Pulsed Drain Current-Max (IDM) 44A
DS Breakdown Voltage-Min 600V
Avalanche Energy Rating (Eas) 200 mJ
Dimensions
Height 6.9mm
Length 6.6mm
Width 2.4mm
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
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