Drain Current-Max (Abs) (ID) 0.09A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 90mA
Turn-Off Delay Time 10 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 45V
Current - Continuous Drain (Id) @ 25°C 90mA Ta
Input Capacitance (Ciss) (Max) @ Vds 25pF @ 10V
Vgs(th) (Max) @ Id 3.5V @ 1mA
Rds On (Max) @ Id, Vgs 14 Ω @ 200mA, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 330mW Ta
Time@Peak Reflow Temperature-Max (s) 40
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory Other Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ