RQ6E030ATTCR
RoHS
/
Package /
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
PDF
/
Buying Options
Total Price: USD $0.46
Unit Price: USD $0.4576
≥1 USD $0.4576
≥10 USD $0.38896
≥100 USD $0.270336
≥500 USD $0.211094
≥1000 USD $0.171582
Inventory: 1066
Minimum: 1
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Technical Details
Compliance
RoHS Status RoHS Compliant
Technical
Drain to Source Resistance 70mOhm
FET Technology METAL-OXIDE SEMICONDUCTOR
Avalanche Energy Rating (Eas) 3.3 mJ
DS Breakdown Voltage-Min 30V
Pulsed Drain Current-Max (IDM) 12A
Drain Current-Max (Abs) (ID) 3A
Polarity/Channel Type P-CHANNEL
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
JESD-30 Code R-PDSO-G6
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form GULL WING
Terminal Position DUAL
ECCN Code EAR99
Number of Terminations 6
Moisture Sensitivity Level (MSL) 1
Physical
Transistor Element Material SILICON
Surface Mount YES
Alternative Model
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