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RoHS
RoHS RoHS compliant
Package TO-3P-3, SC-65-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description N-CHANNEL POWER MOSFET
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Buying Options
Total Price: USD $1.38
Unit Price: USD $1.37655
≥1 USD $1.37655
≥10 USD $1.12955
≥100 USD $1.0944
≥500 USD $1.0583
≥1000 USD $1.02315
Inventory: 1089
Minimum: 1
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Technical Details

Physical

Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Surface Mount NO
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Series QFET?
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status COMMERCIAL
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 185W Tc
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.3 Ω @ 2.9A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1.55pF @ 25V
Current - Continuous Drain (Id) @ 25°C 5.8A Tc
Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
Drain to Source Voltage (Vdss) 900V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Drain Current-Max (Abs) (ID) 5.8A
Pulsed Drain Current-Max (IDM) 23.2A
DS Breakdown Voltage-Min 900V
Avalanche Energy Rating (Eas) 660 mJ

Compliance

RoHS Status ROHS3 Compliant

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