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IXFT16N80P

IXYS
RoHS
RoHS RoHS compliant
Package TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 800V 16A TO-268
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Technical Details

Compliance

RoHS Status ROHS3 Compliant

Technical

Avalanche Energy Rating (Eas) 1000 mJ
Drain to Source Breakdown Voltage 800V
Drain-source On Resistance-Max 0.6Ohm
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 16A
Turn-Off Delay Time 75 ns
Fall Time (Typ) 29 ns
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 32 ns
Gate Charge (Qg) (Max) @ Vgs 71nC @ 10V
Current - Continuous Drain (Id) @ 25°C 16A Tc
Input Capacitance (Ciss) (Max) @ Vds 4600pF @ 25V
Vgs(th) (Max) @ Id 5V @ 4mA
Rds On (Max) @ Id, Vgs 600m Ω @ 500mA, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Power Dissipation 460W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 460W Tc
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSSO-G2
Pin Count 4
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code unknown
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form GULL WING
Technology MOSFET (Metal Oxide)
Additional Feature AVALANCHE RATED
Terminal Finish Matte Tin (Sn)
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e3
Series HiPerFET?, PolarHT?
Published 2006
Packaging Tube
Operating Temperature -55°C~150°C TJ

Physical

Transistor Element Material SILICON
Package / Case TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Mounting Type Surface Mount
Mount Surface Mount

Supply Chain

Factory Lead Time 26 Weeks

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