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RoHS
RoHS RoHS compliant
Package 9-VFBGA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description N-CHANNEL POWER MOSFET
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Buying Options
Total Price: USD $0.92
Unit Price: USD $0.9152
≥1 USD $0.9152
Inventory: 38839
Minimum: 1
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Technical Details

Compliance

RoHS Status ROHS3 Compliant

Technical

DS Breakdown Voltage-Min 20V
Pulsed Drain Current-Max (IDM) 10A
Drain-source On Resistance-Max 0.034Ohm
Drain Current-Max (Abs) (ID) 6A
Vgs (Max) ±12V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Drain to Source Voltage (Vdss) 20V
Gate Charge (Qg) (Max) @ Vgs 10nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 6A Ta
Input Capacitance (Ciss) (Max) @ Vds 670pF @ 10V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Rds On (Max) @ Id, Vgs 23m Ω @ 6A, 4.5V
Transistor Application SWITCHING
FET Type N-Channel
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 1.7W Ta
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Qualification Status COMMERCIAL
JESD-30 Code R-PBGA-B9
Pin Count 9
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code unknown
Peak Reflow Temperature (Cel) 260
Terminal Form BALL
Terminal Position BOTTOM
Technology MOSFET (Metal Oxide)
Terminal Finish TIN SILVER
Number of Terminations 9
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e2
Series PowerTrench?
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ

Physical

Transistor Element Material SILICON
Surface Mount YES
Package / Case 9-VFBGA
Mounting Type Surface Mount

Alternative Model

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