IXFK120N25P
RoHS 
RoHS compliant
RoHS compliantPackage TO-264-3, TO-264AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 250V 120A TO-264
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Buying Options
Total Price: USD $15.84
Unit Price: USD $15.84315
≥1 USD $15.84315
≥10 USD $12.9998
≥100 USD $12.5932
≥500 USD $12.1866
≥1000 USD $11.78095
Inventory: 1190
Minimum: 1
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Radiation Hardening No
Technical
Avalanche Energy Rating (Eas) 2500 mJ
Pulsed Drain Current-Max (IDM) 300A
Drain to Source Breakdown Voltage 250V
Drain-source On Resistance-Max 0.024Ohm
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 120A
Turn-Off Delay Time 130 ns
Fall Time (Typ) 33 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 33ns
Gate Charge (Qg) (Max) @ Vgs 185nC @ 10V
Current - Continuous Drain (Id) @ 25°C 120A Tc
Input Capacitance (Ciss) (Max) @ Vds 8000pF @ 25V
Vgs(th) (Max) @ Id 5V @ 4mA
Rds On (Max) @ Id, Vgs 24m Ω @ 60A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Power Dissipation 700W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 700W Tc
Number of Elements 1
JESD-30 Code R-PSFM-T3
Pin Count 3
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e1
Series PolarHT? HiPerFET?
Published 2006
Packaging Tube
Operating Temperature -55°C~175°C TJ
Physical
Transistor Element Material SILICON
Package / Case TO-264-3, TO-264AA
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 30 Weeks
Alternative Model
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