Turn-Off Delay Time 13.5 ns
Continuous Drain Current (ID) 880mA
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 0.25A
Drain-source On Resistance-Max 2.5Ohm
Drain to Source Breakdown Voltage -20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Feedback Cap-Max (Crss) 12 pF
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Drain to Source Voltage (Vdss) 30V 20V
Gate Charge (Qg) (Max) @ Vgs 1.5nC @ 5V
Current - Continuous Drain (Id) @ 25°C 250mA 880mA
Input Capacitance (Ciss) (Max) @ Vds 33pF @ 5V
Vgs(th) (Max) @ Id 1.5V @ 100μA
Rds On (Max) @ Id, Vgs 1.5 Ω @ 10mA, 4.5V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Dual
Qualification Status Not Qualified
Base Part Number NTJD4158C
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 270mW
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ