HAT2299WP-EL-E
RoHS 
RoHS compliant
RoHS compliantPackage 8-PowerWDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH WPAK
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
DS Breakdown Voltage-Min 150V
Drain-source On Resistance-Max 0.11Ohm
Continuous Drain Current (ID) 14A
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 150V
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Current - Continuous Drain (Id) @ 25°C 14A Ta
Input Capacitance (Ciss) (Max) @ Vds 710pF @ 25V
Rds On (Max) @ Id, Vgs 110m Ω @ 7A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 25W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Qualification Status Not Qualified
Pin Count 8
Time@Peak Reflow Temperature-Max (s) 20
Peak Reflow Temperature (Cel) 260
Terminal Form NO LEAD
Terminal Position DUAL
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
ECCN Code EAR99
Number of Terminations 8
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
Published 2007
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 8
Package / Case 8-PowerWDFN
Mounting Type Surface Mount
Mount Surface Mount
Supply Chain
Factory Lead Time 16 Weeks
Alternative Model
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