Avalanche Energy Rating (Eas) 290 mJ
Drain to Source Breakdown Voltage 60V
Gate to Source Voltage (Vgs) 16V
Continuous Drain Current (ID) 270A
Turn-Off Delay Time 110 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Gate Charge (Qg) (Max) @ Vgs 140nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 195A Tc
Input Capacitance (Ciss) (Max) @ Vds 11210pF @ 50V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Rds On (Max) @ Id, Vgs 2.4m Ω @ 165A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 380W Tc
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~175°C TJ