2SK1775-E
RoHS 
RoHS compliant
RoHS compliantPackage TO-3P-3, SC-65-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
Trans MOSFET N-CH 900V 8A 3-Pin(3+Tab) TO-3PFM
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Radiation Hardening No
Technical
DS Breakdown Voltage-Min 900V
Pulsed Drain Current-Max (IDM) 20A
Drain Current-Max (Abs) (ID) 8A
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 8A
Turn-Off Delay Time 185 ns
Fall Time (Typ) 130 ns
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 900V
Rise Time 135ns
Current - Continuous Drain (Id) @ 25°C 8A Ta
Input Capacitance (Ciss) (Max) @ Vds 1730pF @ 10V
Rds On (Max) @ Id, Vgs 1.6 Ω @ 4A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 25 ns
Case Connection ISOLATED
Power Dissipation 60W
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 60W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Pin Count 3
Terminal Position SINGLE
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish Tin/Copper (Sn/Cu)
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e2
Published 2005
Packaging Tube
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-3P-3, SC-65-3
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 16 Weeks
Alternative Model
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