US5U2TR
RoHS 
RoHS compliant
RoHS compliantPackage 6-SMD (5 Leads), Flat Lead
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 1.4A TUMT5
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Buying Options
Total Price: USD $1.16
Unit Price: USD $1.158607
≥1 USD $1.158607
≥10 USD $1.093024
≥100 USD $1.031149
≥500 USD $0.972787
≥1000 USD $0.917722
Inventory: 1167
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 16 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-SMD (5 Leads), Flat Lead
Number of Pins 5
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e2
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin/Copper (Sn/Cu)
Subcategory FET General Purpose Power
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Current Rating 1.4A
Time@Peak Reflow Temperature-Max (s) 10
Pin Count 5
Number of Elements 1
Power Dissipation-Max 1W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1W
Turn On Delay Time 6 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 240m Ω @ 1.4A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 70pF @ 10V
Current - Continuous Drain (Id) @ 25°C 1.4A Ta
Gate Charge (Qg) (Max) @ Vgs 2nC @ 5V
Rise Time 6ns
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Vgs (Max) ±20V
Fall Time (Typ) 8 ns
Turn-Off Delay Time 13 ns
Continuous Drain Current (ID) 1.4A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.38Ohm
Drain to Source Breakdown Voltage 30V
FET Feature Schottky Diode (Isolated)
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Alternative Model
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