Pulsed Drain Current-Max (IDM) 42A
Drain to Source Breakdown Voltage -100V
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 10.5A
Turn-Off Delay Time 45 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 100V
Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V
Current - Continuous Drain (Id) @ 25°C 10.5A Tc
Input Capacitance (Ciss) (Max) @ Vds 1035pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 300m Ω @ 5.3A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 66W Tc
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Not For New Designs
Operating Temperature -55°C~175°C TJ