Pulsed Drain Current-Max (IDM) 27A
Drain Current-Max (Abs) (ID) 7.3A
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 8A
Turn-Off Delay Time 29 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 1000V
Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V
Current - Continuous Drain (Id) @ 25°C 8A Tc
Input Capacitance (Ciss) (Max) @ Vds 1885pF @ 25V
Vgs(th) (Max) @ Id 5V @ 1mA
Rds On (Max) @ Id, Vgs 1.8 Ω @ 4A, 10V
Transistor Application SWITCHING
Turn On Delay Time 8.5 ns
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 290W Tc
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Powers
Additional Feature FAST SWITCHING, AVALANCHE RATED
Terminal Finish TIN SILVER COPPER
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ