Avalanche Energy Rating (Eas) 34 mJ
DS Breakdown Voltage-Min 30V
Pulsed Drain Current-Max (IDM) 367A
Drain-source On Resistance-Max 0.0061Ohm
Drain Current-Max (Abs) (ID) 71A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 21A
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 26nC @ 10V
Current - Continuous Drain (Id) @ 25°C 21A Ta
Input Capacitance (Ciss) (Max) @ Vds 1683pF @ 15V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Rds On (Max) @ Id, Vgs 4.2m Ω @ 30A, 10V
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 3.1W Ta 37W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Reference Standard AEC-Q101
Reach Compliance Code not_compliant
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~175°C TJ