Drain to Source Breakdown Voltage 30V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 8.5A
Turn-Off Delay Time 11.4 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 11.5V
Gate Charge (Qg) (Max) @ Vgs 6.6nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 6.9A Ta 35A Tc
Input Capacitance (Ciss) (Max) @ Vds 770pF @ 12V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Rds On (Max) @ Id, Vgs 15m Ω @ 30A, 10V
Turn On Delay Time 10.5 ns
Element Configuration Single
Power Dissipation-Max 1.26W Ta 32.6W Tc
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~175°C TJ