IRFH7882TRPBF
RoHS
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Package 8-VQFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 80V 26A
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Technical Details
Physical
Mounting Type Surface Mount
Package / Case 8-VQFN
Surface Mount YES
Number of Pins 8
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series FASTIRFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-N5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 4W Ta 195W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.1m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 3.6V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3186pF @ 40V
Current - Continuous Drain (Id) @ 25°C 26A Ta
Gate Charge (Qg) (Max) @ Vgs 74nC @ 10V
Drain to Source Voltage (Vdss) 80V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 26A
Drain-source On Resistance-Max 0.0031Ohm
Pulsed Drain Current-Max (IDM) 290A
Avalanche Energy Rating (Eas) 704 mJ
Compliance
RoHS Status RoHS Compliant
Alternative Model
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