Drain to Source Resistance 1.5Ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
Drain to Source Breakdown Voltage 20V
Gate to Source Voltage (Vgs) 10V
Continuous Drain Current (ID) 238mA
Turn-Off Delay Time 98 ns
Polarity/Channel Type N-CHANNEL
Drain to Source Voltage (Vdss) 20V
Element Configuration Single
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 300mW
Subcategory FET General Purpose Power
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)