NTP6410ANG
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET NFET TO220 100V 76A 13MOH
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Buying Options
Total Price: USD $2.83
Unit Price: USD $2.8336
≥1 USD $2.8336
≥10 USD $2.245584
≥100 USD $1.924736
≥500 USD $1.710896
≥1000 USD $1.464962
≥3000 USD $1.379418
Inventory: 201
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Radiation Hardening No
Dimensions
Width 15.75mm
Length 10.28mm
Height 4.82mm
Technical
Nominal Vgs 4 V
Avalanche Energy Rating (Eas) 500 mJ
Drain to Source Breakdown Voltage 100V
Gate to Source Voltage (Vgs) 20V
JEDEC-95 Code TO-220AB
Continuous Drain Current (ID) 76A
Turn-Off Delay Time 120 ns
Fall Time (Typ) 190 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 170 ns
Gate Charge (Qg) (Max) @ Vgs 120nC @ 10V
Current - Continuous Drain (Id) @ 25°C 76A Tc
Input Capacitance (Ciss) (Max) @ Vds 4500pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 13m Ω @ 76A, 10V
FET Type N-Channel
Turn On Delay Time 17 ns
Case Connection DRAIN
Power Dissipation 188W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 188W Tc
Number of Elements 1
Pin Count 3
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish Tin (Sn)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e3
Published 2009
Packaging Tube
Operating Temperature -55°C~175°C TJ
Physical
Transistor Element Material SILICON
Weight 4.535924g
Number of Pins 3
Surface Mount NO
Package / Case TO-220-3
Mounting Type Through Hole
Supply Chain
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Factory Lead Time 9 Weeks
Alternative Model
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