Resistor - Emitter Base (R2) 10k Ω
Continuous Collector Current 100mA
Resistor - Base (R1) 10k Ω
Max Breakdown Voltage 50V
Collector Emitter Breakdown Voltage 50V
Vce Saturation (Max) @ Ib, Ic 250mV @ 500μA, 10mA
Current - Collector Cutoff (Max) 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce 35 @ 5mA 10V
Max Collector Current 100mA
Collector Emitter Voltage (VCEO) 250mV
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Transistor Application SWITCHING
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Base Part Number DMG56401
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code unknown
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 150mW
Subcategory BIP General Purpose Small Signal
Additional Feature BUILT IN BIAS RESISITANCE RATIO 1
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)