NTMFS5C612NLT3G
RoHS 
RoHS compliant
RoHS compliantPackage 8-PowerTDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 60V 36A SO8FL
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Buying Options
Total Price: USD $2.31
Unit Price: USD $2.3144
≥1 USD $2.3144
≥10 USD $1.91928
≥100 USD $1.52724
≥500 USD $1.292298
≥1000 USD $1.096498
≥3000 USD $1.041674
Inventory: 1098
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 16 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PDSO-F5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 3.8W Ta 167W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.5m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 6660pF @ 25V
Current - Continuous Drain (Id) @ 25°C 36A Ta 235A Tc
Gate Charge (Qg) (Max) @ Vgs 91nC @ 10V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 235A
Drain-source On Resistance-Max 0.0015Ohm
Pulsed Drain Current-Max (IDM) 900A
DS Breakdown Voltage-Min 60V
Avalanche Energy Rating (Eas) 451 mJ
Compliance
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Alternative Model
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