Drain to Source Resistance 1.4Ohm
Drain to Source Breakdown Voltage 600V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 3.2A
Turn-Off Delay Time 64 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 600V
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Current - Continuous Drain (Id) @ 25°C 3.2A Tc
Input Capacitance (Ciss) (Max) @ Vds 400pF @ 25V
Vgs(th) (Max) @ Id 3.9V @ 135μA
Rds On (Max) @ Id, Vgs 1.4Ohm @ 2A, 10V
Element Configuration Single
Power Dissipation-Max 38W Tc
Technology MOSFET (Metal Oxide)
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Not For New Designs
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ