Resistor - Emitter Base (R2) 4.7 k Ω
Continuous Collector Current -500mA
Resistor - Base (R1) 220 Ω
Frequency - Transition 200MHz
Transition Frequency 200MHz
Collector Emitter Breakdown Voltage 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max) 10μA
DC Current Gain (hFE) (Min) @ Ic, Vce 47 @ 50mA 5V
Max Collector Current 500mA
Collector Emitter Voltage (VCEO) 300mV
Transistor Type PNP - Pre-Biased
Transistor Application SWITCHING
Element Configuration Single
Operating Supply Voltage 50V
Time@Peak Reflow Temperature-Max (s) 10
Peak Reflow Temperature (Cel) 260
Max Power Dissipation 200mW
Subcategory BIP General Purpose Small Signal
Max Operating Temperature 150°C
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Not For New Designs
Packaging Tape & Reel (TR)