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NTMFS4941NT3G

ON Semiconductor
RoHS
/
Package 8-PowerTDFN, 5 Leads
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 30V 9A SO8FL
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Technical Details

Supply Chain

Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)

Physical

Mounting Type Surface Mount
Package / Case 8-PowerTDFN, 5 Leads
Surface Mount YES
Number of Pins 5
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Pin Count 5
Number of Elements 1
Power Dissipation-Max 910mW Ta 25.5W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 11.6 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6.2m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1650pF @ 15V
Current - Continuous Drain (Id) @ 25°C 9A Ta 47A Tc
Gate Charge (Qg) (Max) @ Vgs 25.5nC @ 10V
Rise Time 22ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 2.7 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 47A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 9A
Drain-source On Resistance-Max 0.009Ohm
Pulsed Drain Current-Max (IDM) 140A
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 42 mJ

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

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