NTMFS4854NST1G
RoHS
/
Package 8-PowerTDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 25V 15.2A SO-8FL
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Radiation Hardening No
Technical
Drain to Source Breakdown Voltage 25V
Drain Current-Max (Abs) (ID) 15.2A
Gate to Source Voltage (Vgs) 16V
Continuous Drain Current (ID) 24.4A
Turn-Off Delay Time 38 ns
Fall Time (Typ) 45 ns
Vgs (Max) ±16V
Drive Voltage (Max Rds On,Min Rds On) 3.2V 10V
Rise Time 54ns
Gate Charge (Qg) (Max) @ Vgs 85nC @ 11.5V
Current - Continuous Drain (Id) @ 25°C 15.2A Ta 149A Tc
Input Capacitance (Ciss) (Max) @ Vds 4830pF @ 12V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Rds On (Max) @ Id, Vgs 2.5m Ω @ 15A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 20 ns
Power Dissipation 2.31W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 900mW Ta 86.2W Tc
Number of Elements 1
Pin Count 8
Terminal Form FLAT
Terminal Position DUAL
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish Tin (Sn)
ECCN Code EAR99
Number of Terminations 8
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e3
Series SENSEFET?
Published 2012
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 8
Surface Mount YES
Package / Case 8-PowerTDFN
Mounting Type Surface Mount
Supply Chain
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Alternative Model
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