Avalanche Energy Rating (Eas) 1500 mJ
Pulsed Drain Current-Max (IDM) 200A
Drain to Source Breakdown Voltage 300V
Drain-source On Resistance-Max 0.049Ohm
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 69A
Turn-Off Delay Time 75 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 180nC @ 10V
Current - Continuous Drain (Id) @ 25°C 69A Tc
Input Capacitance (Ciss) (Max) @ Vds 4960pF @ 25V
Vgs(th) (Max) @ Id 5V @ 250μA
Rds On (Max) @ Id, Vgs 49m Ω @ 500mA, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 500W Tc
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED
Terminal Finish Pure Tin (Sn)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ