NTD20N06L
RoHS
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Package /
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
N-CHANNEL SINGLE WITH BUILT-IN DIODE 3 EAR99 Mosfet Transistor 20A 1.36W 60V 0.048Ohm
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Buying Options
Total Price: USD $2.77
Unit Price: USD $2.76545
≥1 USD $2.76545
≥10 USD $2.26955
≥100 USD $2.1983
≥500 USD $2.12705
≥1000 USD $2.05675
Inventory: 24964
Minimum: 1
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Technical Details
Compliance
RoHS Status Non-RoHS Compliant
Technical
Power Dissipation-Max (Abs) 1.36W
FET Technology METAL-OXIDE SEMICONDUCTOR
Avalanche Energy Rating (Eas) 128 mJ
DS Breakdown Voltage-Min 60V
Pulsed Drain Current-Max (IDM) 60A
Drain-source On Resistance-Max 0.048Ohm
Drain Current-Max (Abs) (ID) 20A
Polarity/Channel Type N-CHANNEL
Transistor Application SWITCHING
Case Connection DRAIN
Operating Mode ENHANCEMENT MODE
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Operating Temperature (Max) 175°C
Qualification Status Not Qualified
JESD-30 Code R-PSSO-G2
Pin Count 3
Time@Peak Reflow Temperature-Max (s) 30
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) 240
Terminal Form GULL WING
Terminal Position SINGLE
Subcategory FET General Purpose Power
Terminal Finish Tin/Lead (Sn80Pb20)
ECCN Code EAR99
Moisture Sensitivity Level (MSL) 1
JESD-609 Code e0
Physical
Transistor Element Material SILICON
Number of Terminals 2
Surface Mount YES
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