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NTB6410ANG

ON Semiconductor
RoHS
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Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description Tube Surface Mount N-Channel Single Mosfet Transistor 76A Tc 76A 188W 190ns
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Buying Options
Total Price: USD $12.08
Unit Price: USD $12.0821
≥1 USD $12.0821
≥10 USD $9.91325
≥100 USD $9.60355
≥500 USD $9.29385
≥1000 USD $8.98415
Inventory: 1146
Minimum: 1
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Technical Details

Supply Chain

Lifecycle Status LAST SHIPMENTS (Last Updated: 6 days ago)

Physical

Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount YES
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2009
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 188W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 188W
Case Connection DRAIN
Turn On Delay Time 17 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 13m Ω @ 76A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4500pF @ 25V
Current - Continuous Drain (Id) @ 25°C 76A Tc
Gate Charge (Qg) (Max) @ Vgs 120nC @ 10V
Rise Time 170ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 190 ns
Turn-Off Delay Time 120 ns
Continuous Drain Current (ID) 76A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Avalanche Energy Rating (Eas) 500 mJ
Nominal Vgs 4 V

Dimensions

Height 4.83mm
Length 10.29mm
Width 9.65mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free

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