IRF3717
RoHS
/
Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 20V 20A 8-SOIC
PDF
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Buying Options
Total Price: USD $0.28
Unit Price: USD $0.27645
≥1 USD $0.27645
≥10 USD $0.22705
≥100 USD $0.2204
≥500 USD $0.2128
≥1000 USD $0.20615
Inventory: 1192
Minimum: 1
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Technical Details
Compliance
RoHS Status Non-RoHS Compliant
Technical
Avalanche Energy Rating (Eas) 32 mJ
DS Breakdown Voltage-Min 20V
Pulsed Drain Current-Max (IDM) 160A
Drain-source On Resistance-Max 0.0044Ohm
Drain Current-Max (Abs) (ID) 20A
JEDEC-95 Code MS-012AA
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 20V
Gate Charge (Qg) (Max) @ Vgs 33nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 20A Ta
Input Capacitance (Ciss) (Max) @ Vds 2890pF @ 10V
Vgs(th) (Max) @ Id 2.45V @ 250μA
Rds On (Max) @ Id, Vgs 4.4m Ω @ 20A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 2.5W Ta
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PDSO-G8
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 245
Terminal Form GULL WING
Terminal Position DUAL
Technology MOSFET (Metal Oxide)
HTS Code 8541.29.00.95
Terminal Finish TIN LEAD
ECCN Code EAR99
Number of Terminations 8
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e0
Series HEXFET?
Published 2004
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Surface Mount YES
Package / Case 8-SOIC (0.154, 3.90mm Width)
Mounting Type Surface Mount
Alternative Model
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