Avalanche Energy Rating (Eas) 240 mJ
Drain to Source Breakdown Voltage 60V
Drain-source On Resistance-Max 0.026Ohm
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 45A
Turn-Off Delay Time 33 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 46nC @ 10V
Current - Continuous Drain (Id) @ 25°C 45A Ta
Input Capacitance (Ciss) (Max) @ Vds 1725pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 26m Ω @ 22.5A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 2.4W Ta 125W Tj
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~175°C TJ