Drain to Source Breakdown Voltage 25V
Drain Current-Max (Abs) (ID) 22.5A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 40A
Turn-Off Delay Time 26 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Gate Charge (Qg) (Max) @ Vgs 44nC @ 10V
Current - Continuous Drain (Id) @ 25°C 22.5A Ta 40A Tc
Input Capacitance (Ciss) (Max) @ Vds 2705pF @ 13V
Vgs(th) (Max) @ Id 3V @ 1mA
Rds On (Max) @ Id, Vgs 3.15m Ω @ 22.5A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 2.3W Ta 52W Tc
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Series PowerTrench?, SyncFET?
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ