NDS355AN_G
RoHS
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Package TO-236-3, SC-59, SOT-23-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
N-Channel 30 V 0.085 Ohm Logic Level Enhance Mode Field Effect Transistor-SSOT-3
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Technical Details
Physical
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SuperSOT-3
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 500mW Ta
FET Type N-Channel
Rds On (Max) @ Id, Vgs 85mOhm @ 1.9A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 195pF @ 15V
Current - Continuous Drain (Id) @ 25°C 1.7A Ta
Gate Charge (Qg) (Max) @ Vgs 5nC @ 5V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
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