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RoHS
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Package DIP
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays
Description
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Inventory: 3304
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Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Physical

Mount Through Hole
Package / Case DIP
Transistor Element Material SILICON

Technical

Published 2012
JESD-609 Code e0
Pbfree Code no
Part Status Active
Number of Terminations 14
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Number of Elements 4
Configuration SEPARATE, 4 ELEMENTS
Power Dissipation-Max 1.25W
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 500mV
Max Collector Current 500mA
JEDEC-95 Code TO-116
Collector Emitter Breakdown Voltage 250V
Transition Frequency 50MHz
Frequency - Transition 50MHz
DC Current Gain-Min (hFE) 40

Compliance

RoHS Status RoHS Compliant

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