Pulsed Drain Current-Max (IDM) 70A
Drain to Source Breakdown Voltage -20V
Gate to Source Voltage (Vgs) 8V
Continuous Drain Current (ID) 24A
Turn-Off Delay Time 120 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V
Drain to Source Voltage (Vdss) 20V
Gate Charge (Qg) (Max) @ Vgs 35nC @ 5V
Current - Continuous Drain (Id) @ 25°C 24A Tc
Input Capacitance (Ciss) (Max) @ Vds 1590pF @ 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Rds On (Max) @ Id, Vgs 50m Ω @ 12A, 4.5V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 60W Tc
Technology MOSFET (Metal Oxide)
Subcategory Other Transistors
Additional Feature LOGIC LEVEL COMPATIBLE
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -65°C~175°C TJ