Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 50W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Drain to Source Voltage (Vdss) 600V
Polarity/Channel Type N-CHANNEL
Continuous Drain Current (ID) 12A
Drain-source On Resistance-Max 0.51Ohm
Pulsed Drain Current-Max (IDM) 48A
Avalanche Energy Rating (Eas) 9.6 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR