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MTB50P03HDLG

ON Semiconductor
RoHS
/
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET P-CH 30V 50A D2PAK
PDF
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Buying Options
Total Price: USD $1.34
Unit Price: USD $1.33823
≥1 USD $1.33823
≥10 USD $1.26248
≥100 USD $1.19102
≥500 USD $1.1236
≥1000 USD $1.06
≥3000 USD $1
Inventory: 10000
Minimum: 1
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status RoHS Compliant
REACH SVHC No SVHC

Technical

Drain to Source Breakdown Voltage -30V
Drain-source On Resistance-Max 0.025Ohm
Gate to Source Voltage (Vgs) 15V
Threshold Voltage -1.5V
Continuous Drain Current (ID) 50A
Turn-Off Delay Time 90 ns
Fall Time (Typ) 218 ns
Vgs (Max) ±15V
Drive Voltage (Max Rds On,Min Rds On) 5V
Drain to Source Voltage (Vdss) 30V
Rise Time 340 ns
Gate Charge (Qg) (Max) @ Vgs 100nC @ 5V
Current - Continuous Drain (Id) @ 25°C 50A Tc
Input Capacitance (Ciss) (Max) @ Vds 4900pF @ 25V
Vgs(th) (Max) @ Id 2V @ 250μA
Rds On (Max) @ Id, Vgs 25m Ω @ 25A, 5V
Transistor Application SWITCHING
FET Type P-Channel
Case Connection DRAIN
Power Dissipation 125W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 2.5W Ta 125W Tc
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSSO-G2
Pin Count 3
Time@Peak Reflow Temperature-Max (s) 40
Current Rating -50A
Peak Reflow Temperature (Cel) 260
Terminal Form GULL WING
Technology MOSFET (Metal Oxide)
Voltage - Rated DC -30V
Subcategory Other Transistors
Additional Feature AVALANCHE RATED
Terminal Finish Tin (Sn)
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e3
Published 2006
Packaging Tube
Operating Temperature -55°C~150°C TJ

Physical

Transistor Element Material SILICON
Number of Pins 3
Surface Mount YES
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount

Alternative Model

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