FET Feature Super Junction
Avalanche Energy Rating (Eas) 1800 mJ
Drain to Source Breakdown Voltage 600V
Drain-source On Resistance-Max 0.07Ohm
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 40A
Turn-Off Delay Time 110 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 250nC @ 10V
Current - Continuous Drain (Id) @ 25°C 40A Tc
Vgs(th) (Max) @ Id 3.9V @ 2.5mA
Rds On (Max) @ Id, Vgs 70m Ω @ 500mA, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 290W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form UNSPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED, UL RECOGNIZED
Terminal Finish Nickel (Ni)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -40°C~150°C TJ