Gate to Source Voltage (Vgs) 10V
Continuous Drain Current (ID) 5A
Turn-Off Delay Time 72 ns
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Drain to Source Voltage (Vdss) 12V
Gate Charge (Qg) (Max) @ Vgs 6.9nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 5A Ta
Input Capacitance (Ciss) (Max) @ Vds 660pF @ 6V
Halogen Free Halogen Free
Rds On (Max) @ Id, Vgs 43m Ω @ 3A, 4.5V
Turn On Delay Time 7.4 ns
Element Configuration Single
Power Dissipation-Max 1.5W Ta
Technology MOSFET (Metal Oxide)
Subcategory Other Transistors
Terminal Finish Tin/Bismuth (Sn/Bi)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ
Drain Current-Max (Abs) (ID) 5A