Drain to Source Breakdown Voltage 20V
Gate to Source Voltage (Vgs) 12V
Continuous Drain Current (ID) 4.5A
Turn-Off Delay Time 38 ns
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Gate Charge (Qg) (Max) @ Vgs 5.1nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 4.5A Ta
Input Capacitance (Ciss) (Max) @ Vds 410pF @ 10V
Halogen Free Halogen Free
Rds On (Max) @ Id, Vgs 38m Ω @ 2A, 4.5V
Transistor Application SWITCHING
Turn On Delay Time 7.5 ns
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 1W Ta
Technology MOSFET (Metal Oxide)
Terminal Finish Tin/Bismuth (Sn/Bi)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Not For New Designs
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ