Gate to Source Voltage (Vgs) 10V
Continuous Drain Current (ID) 2A
Turn-Off Delay Time 27 ns
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4V
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 2.8nC @ 4V
Current - Continuous Drain (Id) @ 25°C 2A Ta
Input Capacitance (Ciss) (Max) @ Vds 240pF @ 10V
Rds On (Max) @ Id, Vgs 215m Ω @ 1A, 4V
Turn On Delay Time 5.7 ns
Power Dissipation-Max 900mW Ta
Technology MOSFET (Metal Oxide)
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Terminal Finish Tin/Bismuth (Sn/Bi)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)