DS Breakdown Voltage-Min 1200V
Pulsed Drain Current-Max (IDM) 80A
Drain-source On Resistance-Max 0.09Ohm
Drain Current-Max (Abs) (ID) 30A
Drive Voltage (Max Rds On,Min Rds On) 15V
Drain to Source Voltage (Vdss) 1200V
Gate Charge (Qg) (Max) @ Vgs 51nC @ 15V
Current - Continuous Drain (Id) @ 25°C 30A Tc
Input Capacitance (Ciss) (Max) @ Vds 1350pF @ 1000V
Vgs(th) (Max) @ Id 4V @ 5mA
Rds On (Max) @ Id, Vgs 90m Ω @ 20A, 15V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 113.6W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology SiCFET (Silicon Carbide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ