FQA28N50
RoHS
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Package TO-3P-3, SC-65-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 500V 28.4A TO-3P
PDF
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Buying Options
Total Price: USD $3.78
Unit Price: USD $3.781862
≥1 USD $3.781862
≥10 USD $3.270375
≥100 USD $2.740574
≥500 USD $2.431851
≥1000 USD $2.99535
Inventory: 174
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE, NOT REC (Last Updated: 1 week ago)
Physical
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3
Weight 6.401g
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
Series QFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Voltage - Rated DC 500V
Technology MOSFET (Metal Oxide)
Current Rating 28.4A
Number of Elements 1
Power Dissipation-Max 310W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 310W
Turn On Delay Time 100 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 160m Ω @ 14.2A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5600pF @ 25V
Current - Continuous Drain (Id) @ 25°C 28.4A Tc
Gate Charge (Qg) (Max) @ Vgs 140nC @ 10V
Rise Time 290 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 175 ns
Turn-Off Delay Time 250 ns
Continuous Drain Current (ID) 28.4A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 500V
Dual Supply Voltage 500V
Nominal Vgs 5 V
Dimensions
Height 18.9mm
Length 15.8mm
Width 5mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
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