IRF7665S2TR1PBF
RoHS
/
Package DirectFET? Isometric SB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 100V 4.1A DFET SB
PDF
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Buying Options
Total Price: USD $5.33
Unit Price: USD $5.33235
≥1 USD $5.33235
≥10 USD $4.37475
≥100 USD $4.2389
≥500 USD $4.1021
≥1000 USD $3.9653
Inventory: 1147
Minimum: 1
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET? Isometric SB
Number of Pins 4
Supplier Device Package DIRECTFET SB
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2009
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 62MOhm
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 2.4W Ta 30W Tc
Element Configuration Single
Power Dissipation 2.4W
Turn On Delay Time 3.8 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 62mOhm @ 8.9A, 10V
Vgs(th) (Max) @ Id 5V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds 515pF @ 25V
Current - Continuous Drain (Id) @ 25°C 4.1A Ta 14.4A Tc
Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V
Rise Time 6.4ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 3.6 ns
Turn-Off Delay Time 7.1 ns
Continuous Drain Current (ID) 14.4mA
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Input Capacitance 515pF
Drain to Source Resistance 51mOhm
Rds On Max 62 mΩ
Nominal Vgs 4 V
Dimensions
Height 508μm
Length 4.826mm
Width 3.95mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
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