STP120N10F4
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 100V TO-220
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STP120
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 300W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Transistor Application SWITCHING
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Polarity/Channel Type N-CHANNEL
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 120A
Drain-source On Resistance-Max 0.01Ohm
Pulsed Drain Current-Max (IDM) 390A
DS Breakdown Voltage-Min 100V
Avalanche Energy Rating (Eas) 215 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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