Avalanche Energy Rating (Eas) 78 mJ
Pulsed Drain Current-Max (IDM) 60A
Drain to Source Breakdown Voltage 150V
Drain-source On Resistance-Max 0.04Ohm
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 15A
Turn-Off Delay Time 20 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 18.6nC @ 10V
Current - Continuous Drain (Id) @ 25°C 15A Tc
Input Capacitance (Ciss) (Max) @ Vds 1285pF @ 75V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 40m Ω @ 15A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 22W Tc
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature ULTRA-LOW RESISTANCE
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~175°C TJ