IXA4I1200UC
RoHS
/
Package TO-252-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
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Technical Details
Compliance
RoHS Status RoHS Compliant
Technical
Gate-Emitter Thr Voltage-Max 6.5V
Gate-Emitter Voltage-Max 20V
Collector Emitter Breakdown Voltage 1.2kV
Max Collector Current 9A
Collector Emitter Voltage (VCEO) 2.1V
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max 45W
Operating Temperature (Max) 150°C
Subcategory Insulated Gate BIP Transistors
Physical
Package / Case TO-252-3
Mount Surface Mount
Alternative Model
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