FDP20N50F
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 500V 20A TO-220
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Buying Options
Total Price: USD $2.63
Unit Price: USD $2.6312
≥1 USD $2.6312
≥10 USD $2.088064
≥100 USD $1.789744
≥500 USD $1.590882
≥1000 USD $1.362196
≥3000 USD $1.282653
Inventory: 701
Minimum: 1
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Technical Details
Technical
Vgs(th) (Max) @ Id 5V @ 250μA
Rds On (Max) @ Id, Vgs 260m Ω @ 10A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 45 ns
Power Dissipation 250W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 250W Tc
Number of Elements 1
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish Tin (Sn)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e3
Series UniFET?
Published 2004
Packaging Tube
Operating Temperature -55°C~150°C TJ
Pulsed Drain Current-Max (IDM) 80A
Drain to Source Breakdown Voltage 500V
Drain-source On Resistance-Max 0.26Ohm
Gate to Source Voltage (Vgs) 30V
JEDEC-95 Code TO-220AB
Continuous Drain Current (ID) 20A
Turn-Off Delay Time 100 ns
Fall Time (Typ) 60 ns
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 120 ns
Gate Charge (Qg) (Max) @ Vgs 65nC @ 10V
Current - Continuous Drain (Id) @ 25°C 20A Tc
Input Capacitance (Ciss) (Max) @ Vds 3390pF @ 25V
Physical
Transistor Element Material SILICON
Weight 1.8g
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Factory Lead Time 6 Weeks
Compliance
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Alternative Model
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